Gunn oscillations in GaN channels

Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors

A detailed study of high-field transient and direct-current (DC) transport in GaN-based Gunn diode oscillators is carried out using the commercial simulator Sentaurus Device. Applicability of drift-diffusion (DD) and hydrodynamic (HD) models to high-speed, high-frequency devices is discussed in depth, and the results of the simulations from these models are compared. It is shown, for a highly h...

Entanglement oscillations in non-Markovian quantum channels

We study the non-Markovian dynamics of a two-mode bosonic system interacting with two uncorrelated thermal bosonic reservoirs. We present the solution to the exact microscopic Master equation in terms of the quantum characteristic function and study in details the dynamics of entanglement for bipartite Gaussian states. In particular, we analyze the effects of short-time system-reservoir correla...

Gunn Effect in Compound Semiconductors

A theoretical and experimental study of the Gunn effect is presented. It appears that this effect, originally observed by Gunn as a time variation in the current through ohmic samples of n-GaAs when the sample voltage exceeded a critical value, can be accounted for by the transferred electron model of Ridley and Watkins. This model is based on a transfer of electrons from a low-mass, high-mobil...

InAlN-barrier HFETs with GaN and InGaN channels

The Marcus Gunn pupil.

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